4 FAQs about Photovoltaic panel silicon wafer specification parameter settings

Why are wafer dimensions standardized?

To permit common processing equipment to be used in multiple fabrication lines, it is essential for the wafer dimensions to be standardized. This Specification provides standardized dimensional and certain other common characteristics of silicon wafers based on currently widely used sizes for photovoltaic applications.

What are the selection criteria for silicon wafers?

For silicon wafers, beside the crystal orientation (<100> or <111>) the doping (n- or p-type) as well as the resistivity (Ohm cm) are selection criteria. Silicon wafers usually come as „Prime-grade“ or „Test-grade“, latter mainly have a slightly broader particle specification.

What is the diameter of a silicon wafer?

The diameter of the silicon wafers are specifi ed either in inches or mm. Although an inch is 25.4 mm, the diameters of wafers in inches are usually multiples of 25.0 mm (e.g. 4 inches = 100 mm), which should be clarifi ed beforehand with the supplier.

What are the different types of silicon wafer growth methods?

This Specification allows growth methods that include Czochralski (Cz) method, Floating Zone (FZ) method for single crystal silicon wafers, and casting method with and without seed for cast silicon wafer. The specified cast silicon wafer includes cast silicon category I wafer and cast silicon category II wafer.

View/Download Photovoltaic panel silicon wafer specification parameter settings [PDF]

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